DocumentCode
2567465
Title
A 2.5Gb/s/pin 256Mb GDDR3 SDRAM with Series Pipelined CAS Latency Control and Dual-Loop Digital DLL
Author
Dong Uk Lee ; Hyun Woo Lee ; Ki Chang Kwean ; Young Kyoung Choi ; Hyong Uk Moon ; Seung Wook Kwack ; Shin Deok Kang ; Kwan Weon Kim ; Yong Ju Kim ; Young Jung Choi ; Moran, P. ; Jin Hong Ahn ; Joong Sik Kih
Author_Institution
Hynix Semicond., Ichon
fYear
2006
fDate
6-9 Feb. 2006
Firstpage
547
Lastpage
556
Abstract
A series pipelined CAS latency control with voltage-controlled delay line that extends maximum data rate to 2.5Gb/s/pin at 1.7V, is presented. Other schemes applied in the DLL are dual loop control that increases power noise immunity and LPDCC that achieves low power consumption. All these schemes are implemented in a 8M times 32 device using a 0.10 mum DRAM process
Keywords
DRAM chips; delay lines; delay lock loops; low-power electronics; voltage control; 0.10 micron; 1.7 V; 2.4 Gbit/s; CAS latency control; GDDR3 SDRAM; LPDCC; dual loop digital DLL; power noise immunity; series pipeline; voltage controlled delay line; Clocks; Content addressable storage; Delay; Digital control; Frequency; Graphics; Inverters; Jitter; Pipelines; SDRAM;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
1-4244-0079-1
Type
conf
DOI
10.1109/ISSCC.2006.1696091
Filename
1696091
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