SOI-Based Schottky Barrier Diode Array for Ultraviolet Line-Scanner

Author

You-Na Lee ; Jang-Kyoo Shin ; Young-Tae Lee ; Ishida, Makoto ; Wanghoon Lee

Author_Institution

Sch. of Electron. Eng., Kyungpook Nat. Univ., Daegu, South Korea

Volume

15

Issue

3

fYear

2015

fDate

Mar-15

Firstpage

1727

Lastpage

1731

Abstract

This paper reports on fabrication and characterization of Schottky barrier diodes, which were obtained by Schottky contacts between aluminum electrodes and phosphorous-doped single crystalline silicon layer of silicon-on-insulator (SOI) structure. Our photodetectors (PDs) with this structure have advantages, which are simple fabrication process and compatible with complementary metal-oxide-semiconductor devices. The detector performed with the highest external quantum efficiency of 0.397 at 360 nm in ultraviolet spectral range and compared with other devices in previously reported papers. The light sensitivity of 116.2 mV/mW· cm² and stable response time of ~1.3 ms were achieved at 3 V applied voltage. In addition, operation of an SoI-based 1 × 6 PD array was demonstrated to verify the availability of ultraviolet line-scanner.

Keywords

CMOS integrated circuits; Schottky barriers; Schottky diodes; electrochemical electrodes; elemental semiconductors; photodetectors; sensor arrays; silicon; silicon-on-insulator; ultraviolet detectors; PD array; SOI-based Schottky barrier diode array; Schottky contact; aluminum electrode; complementary metal-oxide-semiconductor device; phosphorous-doped single crystalline silicon layer; photodetector array; silicon-on-insulator; ultraviolet line-scanner; voltage 3 V; wavelength 360 nm; Arrays; Detectors; Electrodes; Fabrication; Photodetectors; Schottky diodes; Silicon; Photodetectors; Schottky contacts; UV line scanner; silicon on insulator technology;

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2014.2363872

Filename

6928483