DocumentCode :
2568183
Title :
11Gb/s monolithically integrated silicon optical receiver for 850nm wavelength
Author :
Swoboda, R. ; Zimmermann, Horst
Author_Institution :
A3PICs, Vienna
fYear :
2006
fDate :
6-9 Feb. 2006
Firstpage :
904
Lastpage :
911
Abstract :
A monolithically integrated optical receiver is realized in a modified silicon 0.5mum BiCMOS process with fT=25 GHz that contains a pin photodiode. At a wavelength of 850nm, a BER of 10-9 , a PRBS of 231-1, the receiver has sensitivities of -10.8dBm, -10.1dBm, and -8.9dBm for data rates of 8Gb/s, 10Gb/s, and 11Gb/s, respectively
Keywords :
BiCMOS analogue integrated circuits; integrated optoelectronics; optical receivers; p-i-n photodiodes; silicon; 0.5 micron; 10 Gbit/s; 11 Gbit/s; 25 GHz; 8 Gbit/s; 850 nm; BiCMOS process; monolithically integrated optical receiver; pin photodiode; silicon; Bit error rate; Capacitance; Cathodes; Detectors; Optical amplifiers; Optical receivers; PIN photodiodes; Semiconductor optical amplifiers; Silicon; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0193-6530
Print_ISBN :
1-4244-0079-1
Type :
conf
DOI :
10.1109/ISSCC.2006.1696131
Filename :
1696131
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2568183
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