DocumentCode
2568347
Title
The design of a new spiral inductor balun used in RF/MW based on 0.13μm CMOS process
Author
Wang, Jie ; Zhang, Wenjun ; Chang, Ruinan ; Yu, Zhiping
Author_Institution
Tsinghua Univ., Beijing
fYear
2007
fDate
22-25 Oct. 2007
Firstpage
352
Lastpage
355
Abstract
The design of a new broadband monolithic passive balun using planar-spiral inductor transformers structure is described. Operational frequencies of the range from 15 GHz to 40 GHz and the center frequency is about 20 GHz. The performance of the balun is simulated, and the results are: the single port power loss is less than 6 dB. The amplitude and phase unbalance are less than 0.5 dB and 5 degree, at 15-40 GHz frequency bandwidth, respectively.
Keywords
CMOS integrated circuits; MIMIC; MMIC; baluns; inductors; transformers; CMOS process; broadband monolithic passive balun; frequency 15 GHz to 40 GHz; phase unbalance; planar-spiral inductor transformers; single port power loss; spiral inductor balun; Bandwidth; CMOS process; CMOS technology; Impedance matching; Inductors; Integrated circuit technology; MMICs; Radio frequency; Spirals; Transformers;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC, 2007. ASICON '07. 7th International Conference on
Conference_Location
Guilin
Print_ISBN
978-1-4244-1132-0
Electronic_ISBN
978-1-4244-1132-0
Type
conf
DOI
10.1109/ICASIC.2007.4415639
Filename
4415639
Link To Document