Title :
Design of asymmetric TCAM (ternary content-addressable memory) cells using FinFET
Author :
Meng-Chou Chang ; Kai-Lun He ; Yu-Chieh Wang
Author_Institution :
Dept. of Electron. Eng., Nat. Changhua Univ. of Educ., Changhua, Taiwan
Abstract :
An independent-gate FinFET can operate in three modes: SG (shorted-gate), IG (independent-gate), and LP (low-power) modes, and thus a FinFET-based circuit offers a rich design space to explore. In this paper, we explore the best configuration for the FinFET-based TCAM cell. Compared with the base TCAM cell, the proposed TCAM cell Config-LPSG-1 can reduce the power dissipation of the TCAM by 35%, and improve the energy-delay product by 30%.
Keywords :
MOSFET; content-addressable storage; integrated circuit design; low-power electronics; asymmetric TCAM cells; independent-gate FinFET; low-power modes; power dissipation; shorted-gate mode; ternary content addressable memory cells; Delays; FinFETs; Logic gates; Power demand; Power dissipation; Predictive models; FinFET; Ternary content-addressable memory (TCAM); low-power electronics;
Conference_Titel :
Consumer Electronics (GCCE), 2014 IEEE 3rd Global Conference on
Conference_Location :
Tokyo
DOI :
10.1109/GCCE.2014.7031172
