DocumentCode :
2568488
Title :
An Organic FET SRAM for Braille Sheet Display with Back Gate to Increase Static Noise Margin
Author :
Takamiya, Makoto ; Sekitani, Tsuyoshi ; Kato, Yu ; Kawaguchi, Hitoshi ; Someya, Takao ; Sakurai, Takayasu
Author_Institution :
Tokyo Univ.
fYear :
2006
fDate :
6-9 Feb. 2006
Firstpage :
1060
Lastpage :
1069
Abstract :
Organic FETs (OFETs) are integrated with actuators and a Braille sheet display is demonstrated. A back-gated OFET SRAM and the circuit technology for the Braille sheet display to enhance speed, yield and lifetime are presented along with essential elements for future large-area electronics made with OFETs
Keywords :
SRAM chips; display devices; field effect transistors; handicapped aids; organic semiconductors; Braille sheet display; OFET; back gate; large-area electronics; organic FET SRAM; static noise margin increase; Actuators; Displays; Driver circuits; FETs; Integrated circuit technology; OFETs; Photodetectors; Pipeline processing; Random access memory; Sensor systems;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0193-6530
Print_ISBN :
1-4244-0079-1
Type :
conf
DOI :
10.1109/ISSCC.2006.1696149
Filename :
1696149
Link To Document :
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