DocumentCode
2568538
Title
A 2V Organic Complementary Inverter
Author
De Vusser, S. ; Steudel, Soeren ; Myny, Kris ; Genoe, Jan ; Heremans, Paul
Author_Institution
IMEC, Leuven
fYear
2006
fDate
6-9 Feb. 2006
Firstpage
1082
Lastpage
1091
Abstract
A complementary organic thin-film transistor technology uses pentacene and F16CuPc as the p-type and n-type materials, respectively. The semiconductors are patterned by vacuum deposition through an integrated shadow mask, while tilting the substrate. Organic complementary inverters are realized that display an almost ideal inverter curve at a supply voltage of 2V, showing a gain of 14 and a noise margin of 0.65V
Keywords
copper compounds; fluorine compounds; logic gates; masks; organic semiconductors; thin film transistors; vacuum deposition; 2 V; complementary organic thin-film transistor; copper hexadecafluorophtalocyanine; integrated shadow mask; organic complementary inverter; pentacene; vacuum deposition; Displays; Inverters; Organic materials; Organic thin film transistors; Pentacene; Semiconductor device noise; Semiconductor materials; Substrates; Thin film transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
1-4244-0079-1
Type
conf
DOI
10.1109/ISSCC.2006.1696152
Filename
1696152
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