Title :
CMOS-on-Plastic Technology using Sequential Laterally Solidified Silicon Thin-Film Transistors
Author :
Kane, M.G. ; Goodman, Louis ; van der Wilt, Paul C ; Limanov, A.V. ; Im, J.S.
Abstract :
CMOS circuits are directly fabricated on plastic substrates using a process with a maximum temperature of 300degC. NMOS transistors with 2mum channel lengths have unity-gain frequencies greater than 250MHz, and CMOS ring oscillators operate at 100MHz with a 15V supply
Keywords :
CMOS digital integrated circuits; crystallisation; integrated circuit manufacture; integrated circuit technology; oscillators; silicon-on-insulator; thin film transistors; 100 MHz; 15 V; 2 micron; 250 MHz; 300 C; CMOS circuits; CMOS ring oscillators; CMOS-on-plastic technology; NMOS transistors; plastic substrates; silicon thin-film transistors; CMOS process; CMOS technology; Circuits; Frequency; MOSFETs; Plastics; Silicon; Substrates; Temperature; Thin film transistors;
Conference_Titel :
Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0079-1
DOI :
10.1109/ISSCC.2006.1696153
