Title :
An Ultra-Wideband CMOS low noise amplifier For 3–5 GHz UWB wireless receivers
Author :
Su, Jianfeng ; Fu, Zhongqian ; Yuan, Haiquan ; Zeng, Minghui
Author_Institution :
Univ. of Sci. & Technol. of China Hefei, Hefei
Abstract :
An UWB (ultra wide band) low noise amplifier (LNA), which is designed with the HJTC´s 0.18 mum CMOS process, is presented in this paper. Simulation results show a gain from 10 to 13.3 dB over a bandwidth range from 3 to 5 GHz. This LNA achieves a noise figure less than 5.5 dB and power dissipation less than 12.5 mW under a power supply of 1.8 V. The input/output return loss is higher than 9/14 dB.
Keywords :
CMOS integrated circuits; low noise amplifiers; radio receivers; ultra wideband communication; frequency 3 GHz to 5 GHz; gain 10 dB to 13.3 dB; low noise amplifier; size 0.18 mum; ultra-wideband CMOS; ultra-wideband wireless receivers; voltage 1.8 V; Bandwidth; CMOS process; CMOS technology; Circuits; Frequency response; Inductors; Low-noise amplifiers; Noise figure; Resonance; Ultra wideband technology;
Conference_Titel :
ASIC, 2007. ASICON '07. 7th International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4244-1132-0
Electronic_ISBN :
978-1-4244-1132-0
DOI :
10.1109/ICASIC.2007.4415653
