Title :
A Back-Illuminated High-Sensitivity Small-Pixel Color CMOS Image Sensor with Flexible Layout of Metal Wiring
Author :
Iwabuchi, S. ; Maruyama, Y. ; Ohgishi, Y. ; Muramatsu, M. ; Karasawa, Nobuhiro ; Hirayama, Takatsugu
Author_Institution :
SONY, Atsugi
Abstract :
A 1.3Mpixel color image sensor with a back-illuminated configuration and 3.45mum square pixels is fabricated in 0.25mum 1P3M CMOS. Its sensitivity at a wavelength of 550nm is 34% better than that of a conventional device, and it falls by only 15% when the light is incident at an angle of 20 degrees. Flexibility in metal wiring layout improves device characteristics such as saturation output
Keywords :
CMOS image sensors; wiring; 0.25 micron; 1P3M CMOS; 3.45 micron; 550 nm; back-illuminated configuration; color image sensor; metal wiring layout; small-pixel color CMOS image sensor; CMOS image sensors; Computational Intelligence Society; Degradation; Digital cameras; Image quality; Optical saturation; Optical sensors; Pixel; Silicon; Wiring;
Conference_Titel :
Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0079-1
DOI :
10.1109/ISSCC.2006.1696162
