On-wafer large signal pulsed measurements

The authors present an on-wafer fully automated pulse-measurement system for automatically extracting the characteristics of the nonlinear current generators of a field-effect transistor (FET) as a function of the gate-to-source and drain-to-source voltages. Measurements performed for different DC and pulse width voltage conditions make it possible to extract accurate nonlinear FET models and analyze the trapping and temperature effects. The three key components of the system are the power-pulse generator, which delivers drain pulses without distortion, the microwave absorbers, which eliminate possible high-frequency oscillations, and the associated software programmed in Pascal, which controls the instruments, processes a large number of data, fits the measured data to analytical expressions, and displays the results.<>