A curvature compensated CMOS bandgap voltage reference for high precision applications

Author

Chen, Jianghua ; Ni, Xuewen ; Mo, Bangxian

Author_Institution

Peking Univ., Beijing

fYear

2007

fDate

22-25 Oct. 2007

Firstpage

510

Lastpage

513

Abstract

This paper describes a high precision high order curvature compensated bandgap voltage reference in a 0.5-mum 2P3M n-well mixed signal CMOS technology. This newly proposed bandgap voltage reference utilizes a Buck´s voltage transfer cell and a temperature independent current, to provide a high order compensation of the V_BE-Cascode structures are also introduced in this bandgap voltage reference to improve the power supply rejection ratio (PSRR). This circuit achieves 5.6 ppm/degC of temperature coefficient with temperature ranging from -20 to 100degC at 5 V power supply. The variation in the output voltage of the bandgap voltage reference is 0.4 mV when V_DD varies from 4 V to 6 V.

Keywords

CMOS integrated circuits; compensation; mixed analogue-digital integrated circuits; cascode structures; curvature compensated CMOS bandgap voltage reference; mixed signal CMOS technology; power supply rejection ratio; size 0.5 mum; temperature independent current; voltage transfer cell; CMOS technology; Circuits; Mirrors; Photonic band gap; Power supplies; Resistors; Stability; Temperature dependence; Temperature distribution; Voltage; CMOS; analog integrated circuits; bandgap reference; highorder curvature compensation; low temperature coefficient;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC, 2007. ASICON '07. 7th International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4244-1132-0

Electronic_ISBN

978-1-4244-1132-0

Type

conf

DOI

10.1109/ICASIC.2007.4415679

Filename

4415679