Direct-coupled amplifier using AlGaAs/GaAs ballistic collection transistors (BCTs)

Author

Yamauchi, Yoshiki ; Ishibashi, Tadao

Author_Institution

LSI Lab., NTT, Kanagawa, Japan

fYear

1988

fDate

6-9 Nov. 1988

Firstpage

121

Lastpage

124

Abstract

The authors report on a direct-coupled amplifier using AlGaAs/GaAs heterojunction bipolar transistors with near-ballistic collection structure, called ballistic collection transistors (BCTs). The amplifier consists of two BCTs without level-shift diodes. With this simplified circuit configuration, an excellent performance of 12-dB gain with an 8.5-GHz bandwidth was obtained. It is concluded that the results clearly demonstrate that BCTs are very promising devices for high-gain, wideband amplifiers.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; solid-state microwave circuits; wideband amplifiers; 12 dB; 8.5 GHz; AlGaAs-GaAs; BCTs; III-V semiconductors; ballistic collection transistors; circuit configuration; direct-coupled amplifier; heterojunction bipolar transistors; high-gain; microwave circuits; near-ballistic collection structure; wideband amplifiers; Bandwidth; Broadband amplifiers; Circuits; Current density; Diodes; Gallium arsenide; Heterojunction bipolar transistors; Performance gain; Power supplies; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE

Conference_Location

Nashville, Tennessee, USA

Type

conf

DOI

10.1109/GAAS.1988.11039

Filename

11039