DocumentCode
2569462
Title
A 1 to 40 GHz MESFET hybrid distributed amplifier
Author
Brouzes, H. ; Deredec, G. ; Bender, Y.W.
Author_Institution
Thomson-CSF, Malakoff, France
fYear
1989
fDate
13-15 June 1989
Firstpage
849
Abstract
A 1-40-GHz hybrid amplifier with 10 dB minimum gain up to 40 GHz and using 0.3- mu m MESFETs is presented. Gain ripple is +or-1 dB in the 1-26.5-GHz range. The maximum noise figure is 7.5 dB in the 2-18-GHz range, and output power at 1-dB gain compression is 11 dB. The circuit includes a 1-40-GHz biasing system. Device S-parameters were measured in the 1-20-GHz band, and static measurements were used to derive an equivalent circuit for the FET, leading to very good agreement between simulations and measurements up to 40 GHz.<>
Keywords
S-parameters; Schottky gate field effect transistors; microwave amplifiers; solid-state microwave circuits; 0.3 micron; 1 to 40 GHz; 10 dB; 7.5 dB; MESFET hybrid distributed amplifier; S-parameters; equivalent circuit; freq 1 to 40 GHz; gain compression; gain ripple; maximum noise figure; output power; static measurements; Capacitors; Distributed amplifiers; Equivalent circuits; FETs; Frequency; HEMTs; MESFETs; Performance gain; Scattering parameters; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location
Long Beach, CA, USA
Type
conf
DOI
10.1109/MWSYM.1989.38855
Filename
38855
Link To Document