• DocumentCode
    2569816
  • Title

    Voltage coupling using powerMOS transistors

  • Author

    Thereze, J.M. ; Busson, E.

  • Author_Institution
    Alcatel CIT, Lannion, France
  • Volume
    2
  • fYear
    1993
  • fDate
    27-30 Sep 1993
  • Firstpage
    221
  • Abstract
    Telecommunication systems are becoming more and more compact and reliable. These requirements also apply to power converters. Reliability and compactness require an improvement in conversion efficiency and sometimes voltage distribution redundancy. This redundancy is typically performed by an “OR-ing diodes”, at considerable energy loss. To correct this problem, coupling diodes can be replaced by a low Rdson powerMOS that are saturated and associated with control electronics that blocks them if there is a fault. The authors first examine the circuitry associated with these techniques. Then, they discuss the choice of components and their capacities, and finally they consider their advantages and disadvantages
  • Keywords
    power MOSFET; power convertors; redundancy; telecommunication power supplies; voltage distribution; Rdson; compactness; components; conversion efficiency; power converters; powerMOS transistors; reliability; telecommunication systems; voltage coupling; voltage distribution redundancy; Circuit faults; Content addressable storage; Coupling circuits; Diodes; MOSFETs; Power system reliability; Redundancy; Telecommunication control; Temperature sensors; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Telecommunications Energy Conference, INTELEC '93. 15th International
  • Conference_Location
    Paris
  • Print_ISBN
    0-7803-1842-0
  • Type

    conf

  • DOI
    10.1109/INTLEC.1993.388570
  • Filename
    388570