DocumentCode
2569816
Title
Voltage coupling using powerMOS transistors
Author
Thereze, J.M. ; Busson, E.
Author_Institution
Alcatel CIT, Lannion, France
Volume
2
fYear
1993
fDate
27-30 Sep 1993
Firstpage
221
Abstract
Telecommunication systems are becoming more and more compact and reliable. These requirements also apply to power converters. Reliability and compactness require an improvement in conversion efficiency and sometimes voltage distribution redundancy. This redundancy is typically performed by an “OR-ing diodes”, at considerable energy loss. To correct this problem, coupling diodes can be replaced by a low Rdson powerMOS that are saturated and associated with control electronics that blocks them if there is a fault. The authors first examine the circuitry associated with these techniques. Then, they discuss the choice of components and their capacities, and finally they consider their advantages and disadvantages
Keywords
power MOSFET; power convertors; redundancy; telecommunication power supplies; voltage distribution; Rdson; compactness; components; conversion efficiency; power converters; powerMOS transistors; reliability; telecommunication systems; voltage coupling; voltage distribution redundancy; Circuit faults; Content addressable storage; Coupling circuits; Diodes; MOSFETs; Power system reliability; Redundancy; Telecommunication control; Temperature sensors; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Telecommunications Energy Conference, INTELEC '93. 15th International
Conference_Location
Paris
Print_ISBN
0-7803-1842-0
Type
conf
DOI
10.1109/INTLEC.1993.388570
Filename
388570
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