Two-Dimensional Analytical Modeling of Fully Depleted Short-Channel DG SOI MOSFET

Author

Hosseini, Seyed Ebrahim ; Anvarifard, Mohammad K. ; Armaki, Mahdi Gordi

Author_Institution

Dept. of Eng., Sabzevar Tarbeyat Moallem Univ., Sabzevar, Iran

fYear

2009

fDate

15-17 May 2009

Firstpage

897

Lastpage

900

Abstract

In this paper a two-dimensional (2-D) analytical model for the surface potential variation along the channel in a fully depleted dualiquestgate silicon-on-insulator MOSFETs is proposed to investigate the short-channel effects (SCEs). We demonstrate that the surface potential in the channel region exhibits a step function which causes the screening of the drain potential by the gate near the drain resulting in suppressed SCEs like hot-carrier effect and drain-induced barrier-lowering (DIBL).

Keywords

MOSFET; silicon-on-insulator; surface potential; depleted short-channel DG SOI MOSFET; drain potential screening; drain-induced barrier- lowering; dual-gate silicon-on-insulator MOSFET; hot-carrier effect; short-channel effects; step function; surface potential variation; two-dimensional analytical modeling; Analytical models; FETs; Hot carrier effects; MOSFET circuits; Poisson equations; Semiconductor films; Semiconductor thin films; Silicon on insulator technology; Threshold voltage; Transistors; dual gate; insulated gate field effect transistors; short channel effects (SCEs); silicon-on-insulator(SOI) MOSFET);

fLanguage

English

Publisher

ieee

Conference_Titel

2009 International Conference on Signal Processing Systems

Conference_Location

Singapore

Print_ISBN

978-0-7695-3654-5

Type

conf

DOI

10.1109/ICSPS.2009.172

Filename

5166920