DocumentCode :
2570208
Title :
AR/02 Gas Pressure Dependence of Atomic Components of Zirconia Prepared by Intermittent Zirconium Arc PBII&D
Author :
Yukimura, Ken ; Ono, H. ; Nakamura, Kentaro ; Sasaki, Motoharu
Author_Institution :
Dept. of Electr. Eng., Doshisha Univ., Kyotanabe
fYear :
2005
fDate :
20-23 June 2005
Firstpage :
225
Lastpage :
225
Abstract :
Summary form only given. In this work, a zirconium oxide film was prepared using intermittent zirconium cathodic arc discharge at a repetition rate of 0.25 Hz. The plasma-based ion implantation and deposition (PBII&D) method was employed for the zirconia film preparation. The Ar/O2 gas pressure dependence of atomic components of zirconia is investigated and related to the plasma density.
Keywords :
arcs (electric); plasma density; plasma deposited coatings; plasma deposition; plasma immersion ion implantation; zirconium compounds; Ar-O2; Ar-O2 gas pressure; ZrO2; atomic components; frequency 0.25 Hz; intermittent zirconium arc PBII&D; plasma density; plasma deposition; plasma-based ion implantation; zirconium cathodic arc discharge; zirconium oxide film; Argon; Etching; Frequency; Plasma applications; Plasma density; Plasma immersion ion implantation; Plasma simulation; Plasma sources; Space vector pulse width modulation; Zirconium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 2005. ICOPS '05. IEEE Conference Record - Abstracts. IEEE International Conference on
Conference_Location :
Monterey, CA
ISSN :
0730-9244
Print_ISBN :
0-7803-9300-7
Type :
conf
DOI :
10.1109/PLASMA.2005.359279
Filename :
4198538
Link To Document :
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