Picosecond optoelectronic characterization of a heterojunction bipolar transistor

Author

Matloubian, M. ; Fetterman, H. ; Kim, Marn-Go ; Oki, Aaron ; Camou, J. ; Moss, S. ; Smith, D. ; Knudsen, J.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

fYear

1989

fDate

13-15 June 1989

Firstpage

889

Abstract

A time-domain network analyzer with a bandwidth greater than 100 GHz was constructed using picosecond optoelectronic techniques. The S-parameters of a heterojunction bipolar transistor (HBT) with an f/sub max/ of 35 GHz were measured using this system. The results show good agreement with measurements of a similar HBT using a conventional vector network analyzer over the bandwidth of the analyzer (26 GHz). The optoelectronically measured S-parameters of the device were limited by the cutoff frequency of the device.<>

Keywords

S-parameters; heterojunction bipolar transistors; microwave measurement; network analysers; optoelectronic devices; semiconductor device testing; solid-state microwave devices; 100 GHz; 35 GHz; S-parameters; bandwidth; cutoff frequency; heterojunction bipolar transistor; picosecond optoelectronic techniques; time-domain network analyzer; Frequency measurement; Heterojunction bipolar transistors; Integrated circuit measurements; Millimeter wave devices; Millimeter wave measurements; Millimeter wave technology; Millimeter wave transistors; Pulse generation; Scattering parameters; Time domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1989., IEEE MTT-S International

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MWSYM.1989.38865

Filename

38865