Title :
Wideband fully monolithic X- and K-band GaAs receiver
Author :
Yang, D.C. ; Lin, Tingyi S. ; Esfandiari, R. ; Bui, S. ; O´Neill, T.J. ; Chow, Derek ; Takamoto, J. ; Kobayashi, K.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
Abstract :
Two wideband, fully monolithic receiver modules were developed at X- and K-bands. The X-band receiver results are comparable to those of the hybrid design. By using the frequency scaling and standard microcell design approaches, the K-band receiver showed very good first iteration results. The X-band receiver module has an overall gain of 20 dB with 6-10-GHz RF input signal, 9-13-GHz LO (local oscillator) and 3-GHz IF. The K-band receiver has 12 dB conversion gain with 18-22-GHz RF input signal, 21-25-GHz LO and 3-GHz IF.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; receivers; 12 dB; 20 dB; 3 to 25 GHz; GaAs; III-V semiconductors; K-band; MESFET; MMIC; X-band; frequency scaling; local oscillator; microwave IC; monolithic receiver modules; standard microcell design; wideband; Gallium arsenide; K-band; MESFETs; MMICs; Microcell networks; Millimeter wave technology; Radio frequency; Radiofrequency amplifiers; Substrates; Wideband;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location :
Nashville, Tennessee, USA
DOI :
10.1109/GAAS.1988.11049
