Title :
W-band monolithic subharmonically pumped receiver components
Author :
Lan, G.L. ; Chen, J.C. ; Pao, C.K. ; Wong, W.S.
Author_Institution :
Hughes Aircraft Co., Torrance, CA, USA
Abstract :
Components for a W-band monolithic subharmoniously pumped receiver have been developed. A conversion loss of 8.8 dB has been achieved for a monolithic W-band subharmonically pumped mixer with a Q-band local oscillator (LO) drive of 10 dBm. A monolithic GaAs Gunn local oscillator with more than 20-mW output power at 46 GHz has been developed. It is noted that this work is the first step toward the integration of a complete W-band monolithic receiver on a single GaAs chip.<>
Keywords :
Gunn oscillators; III-V semiconductors; MMIC; gallium arsenide; mixers (circuits); receivers; 20 mW; 46 GHz; 8.8 dB; EHF; GaAs; Gunn local oscillator; III-V semiconductors; MM-wave type; MMIC; Q-band local oscillator; W-band; conversion loss; microwave IC; millimetre wave operation; monolithic receiver; single chip receiver development; subharmonically pumped receiver components; Circuits; Fixtures; Gallium arsenide; Gunn devices; Local oscillators; Radio frequency; Schottky barriers; Schottky diodes; Substrates; Testing;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location :
Nashville, Tennessee, USA
DOI :
10.1109/GAAS.1988.11050
