DocumentCode
2570655
Title
A distributed double-balanced dual-gate FET mixer
Author
Pavio, A.M. ; Halladay, R.H.
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
fYear
1988
fDate
6-9 Nov. 1988
Firstpage
177
Lastpage
180
Abstract
A double-balanced dual-gate FET mixer, which is very insensitive to DC bias and RF termination variations, has been fabricated using monolithic circuit technology. The unique approach requires only one balun (balance-unbalance converter), which can be either active or passive and exhibits excellent decade-band performance with overlapping frequency response on all ports. It is concluded that this device can be used as a broadband upconverter as well as a conventional mixer in a variety of receiver applications. In addition, since the mixer is completely balanced, the IF frequency response can overlay the LO (local oscillator) or RF responses which usually can only be accomplished with a double-double balanced structure.<>
Keywords
MMIC; field effect integrated circuits; frequency convertors; mixers (circuits); receivers; MMIC; balance-unbalance converter; balun; broadband upconverter; decade-band performance; distributed double balanced type; dual-gate FET mixer; microwave IC; monolithic circuit technology; receiver applications; Analytical models; Circuits; Diodes; Gallium arsenide; Impedance matching; Microwave FETs; Mixers; Performance analysis; Radio frequency; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location
Nashville, Tennessee, USA
Type
conf
DOI
10.1109/GAAS.1988.11052
Filename
11052
Link To Document