Title :
2-26 GHz MMIC frequency converter
Author :
Titus, W. ; Miller, M.
Author_Institution :
Raytheon Co., Lexington, MA, USA
Abstract :
A 2-26-GHz frequency down-converter has been integrated onto a single GaAs MMIC (monolithic microwave integrated circuit) chip. The chip includes a distributed dual-gate FET mixer, an elliptic IF filter and a single stage IF amplifier. The reported circuit down-converts 2-to-26-GHz signals to a 400-MHz-to-2.5-GHz IF signals with 10-dB conversion gain using a 12-dBM LO (local oscillator) drive. The measured LO-to-IF and RF-to-IF isolation is better than 20 dB from 4 to 26 GHz. The LO to RF isolation is 35 dB from 2 to 12 GHz and better than 24 dB up to 26 GHz. It is concluded that the circuit demonstrates the exceptional bandwidth capabilities of the distributed mixer topology and a high level of component integration.<>
Keywords :
III-V semiconductors; MMIC; frequency convertors; gallium arsenide; mixers (circuits); 10 dB; 2 to 26 GHz; 400 MHz to 2.5 GHz; GaAs; IF signals; III-V semiconductors; MMIC; SHF; conversion gain; distributed dual-gate FET mixer; down-converter; elliptic IF filter; frequency converter; local oscillator; monolithic microwave integrated circuit; single stage IF amplifier; Distributed amplifiers; Frequency conversion; Gallium arsenide; MMICs; Microwave FET integrated circuits; Microwave FETs; Microwave filters; Microwave integrated circuits; Mixers; Monolithic integrated circuits;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location :
Nashville, Tennessee, USA
DOI :
10.1109/GAAS.1988.11053