A 12 watt 20 GHz FET power amplifier

Author

Auricchio, F.S., Jr. ; Rhodes, R.A. ; Day, D.S.

Author_Institution

Hughes Aircraft Co., El Segundo, CA, USA

fYear

1989

fDate

13-15 June 1989

Firstpage

933

Abstract

A state-of-the-art 20-GHz GaAs FET power amplifier with a maximum output of 12 W and 15.5% power-added efficiency has been developed. The amplifier utilizes a novel 2.0-W power FET design that incorporates partial-input impedance-matching circuitry on the FET die to improve bandwidth performance and repeatability. Single-ended and balanced power modules were combined with low-loss waveguide hybrids in a planar amplifier designed for integration into satellite systems. Each module was fabricated using space-flight-approved materials and processes.<>

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; microwave amplifiers; power amplifiers; power integrated circuits; 12 W; 15.5 percent; 20 GHz; FET power amplifier; GaAs; balanced power modules; bandwidth performance; low-loss waveguide hybrids; partial-input impedance-matching circuitry; power FET design; power output; power-added efficiency; repeatability; satellite systems; space-flight-approved materials; Bandwidth; Circuits; FETs; Fingers; Gallium arsenide; Impedance matching; Power amplifiers; Power generation; Satellites; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1989., IEEE MTT-S International

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MWSYM.1989.38875

Filename

38875