Title :
A 0.15 mu m gate-length pseudomorphic HEMT
Author :
Smith, P.M. ; Kao, M.Y. ; Ho, P. ; Chao, P.C. ; Duh, K.H.G. ; Jabra, A.A. ; Smith, R.P. ; Ballingall, J.M.
Author_Institution :
General Electric Co., Syracuse, NY, USA
Abstract :
A 0.15- mu m-gate-length double-heterojunction pseudomorphic HEMT (high electron mobility transistor) that exhibits state-of-the-art power and noise performance is reported. Power results include record power-added efficiencies of 51%, 41% and 23% at 35, 60 and 94 GHz, respectively, and output powers of 139 mW at 60 GHz and 57 mW at 94 GHz. Measured minimum noise figures of 0.55 dB at 18 GHz and 1.8 dB at 60 GHz are reported. It is suggested that because of its demonstrated performance and continued rapid rate of improvement, the pseudomorphic HEMT should be the preferred transistor for a number of millimeter-wave applications, used either as a discrete device in high-performance hybrid amplifiers or integrated into GaAs-based MMICs (monolithic microwave integrated circuits).<>
Keywords :
MMIC; field effect integrated circuits; high electron mobility transistors; power transistors; solid-state microwave devices; 0.55 to 1.8 dB; 18 to 94 GHz; 23 to 51 percent; 57 to 139 mW; EHF; GaAs; GaAs-based MMICs; MM-wave device; SHF; discrete device; double-heterojunction; high electron mobility transistor; high-performance hybrid amplifiers; integrated device; microwave power transistor; millimeter-wave applications; monolithic microwave integrated circuits; noise performance; power-added efficiencies; pseudomorphic HEMT; submicron gate length; HEMTs; MMICs; MODFETs; Microwave transistors; Millimeter wave integrated circuits; Millimeter wave measurements; Noise figure; Noise measurement; PHEMTs; Power generation;
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MWSYM.1989.38887
