Title :
44 GHz hybrid HEMT power amplifiers
Author :
Ferguson, D.W. ; Smith, P.M. ; Chao, P.C. ; Lester, L.F. ; Smith, R.P. ; Ho, P. ; Jabra, A. ; Ballingall, J.M.
Author_Institution :
GE Aerosp., Syracuse, NY, USA
Abstract :
Doped-channel, 0.25- mu m-gate-length, InGaAs pseudomorphic HEMTs (high electron mobility transistors) have been developed which exhibit state-of-the-art power performance at millimeter-wave frequencies, with output power density of 0.93 W/mm and power-added efficiency of 41% at 44 GHz. Using these devices, two Q-band hybrid power amplifiers have been developed. A two-stage design has produced 108 mW output power gain with 9.5 dB and 26.5% power-added efficiency. A three-stage design produced 251 mW output power with 13.6 dB of gain and 26.8% power-added efficiency. The peak efficiency of the three-state amplifier was 31.3% when biased differently. The linear gain of these amplifiers was 12 and 20 dB respectively. It is concluded that these amplifiers are an attractive alternative for designers of future millimeter-wave transmitters.<>
Keywords :
high electron mobility transistors; hybrid integrated circuits; microwave amplifiers; microwave integrated circuits; power amplifiers; power integrated circuits; 0.25 micron; 108 mW; 251 mW; 26.5 to 41 percent; 44 GHz; 9.5 to 20 dB; EHF; InGaAs; MM-wave devices; Q-band; doped channel; high electron mobility transistors; hybrid HEMT power amplifiers; microwave amplifiers; millimeter-wave frequencies; power performance; power-added efficiency; pseudomorphic HEMTs; three-stage design; two-stage design; Frequency; Gain; HEMTs; Indium gallium arsenide; MODFETs; Millimeter wave transistors; PHEMTs; Power amplifiers; Power generation; Transmitters;
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MWSYM.1989.38888
