DocumentCode
2571109
Title
An easy-to-use FET DRO design procedure suited to most CAD programs
Author
Wilson, P.G. ; Carver, R.D.
Author_Institution
British Telecom Res. Lab., Ipswich, UK
fYear
1989
fDate
13-15 June 1989
Firstpage
1033
Abstract
A design procedure for a reflection-stabilized dielectric resonator oscillator (DRO) is given that takes advantage of the facilities available from most linear microwave CAD (computer-aided design) programs, hence streamlining and simplifying the task. The method was used to design 27.61-GHz MESFET hybrid DROs with an average output power of +3 dBm, +or-2-MHz stability from -20 to +40 degrees C, and -75 dBc/Hz phase noise at 10 kHz from carrier. The circuit has been designed to be transferable to GaAs with few modifications.<>
Keywords
circuit CAD; dielectric resonators; field effect transistor circuits; hybrid integrated circuits; microwave integrated circuits; microwave oscillators; solid-state microwave circuits; 27.61 GHz; FET DRO; MESFET hybrid DROs; SHF; computer-aided design; design procedure; dielectric resonator oscillator; linear microwave CAD programs; reflection-stabilized; Design automation; Electromagnetic heating; Frequency; Laboratories; Microwave FETs; Microwave oscillators; Power generation; Reflection; Scattering parameters; Stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location
Long Beach, CA, USA
Type
conf
DOI
10.1109/MWSYM.1989.38899
Filename
38899
Link To Document