Title :
A 22GS/s 5b adc in 0.13/spl mu/m SiGe BiCMOS
Author :
Schvan, Peter ; Pollex, Daniel ; Wang, Shing-Chi ; Falt, Chris ; Ben-Hamida, Naim
Author_Institution :
Nortel, Ottawa, Ont.
Abstract :
A 22GS/S 5b ADC implemented in 130nm SiGe BiCMOS technology is presented. The ADC has 0.64V input range and achieves 4.4b and 3.5b ENOB with 34dB and 29dB SFDR at 5GHz and 7GHz input frequencies, respectively. Measured DNL and INL are <0.5LSB and BER is 10-4 at 22GS/s. The ADC consumes 3W from a 3.3V supply
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; analogue-digital conversion; error statistics; 0.13 micron; 0.64 V; 130 nm; 3.3 V; 3.5 bit; 4.4 bit; 5 GHz; 5 bit; 7 GHz; BiCMOS technology; SiGe; analog-to-digital converter; bit error rate; BiCMOS integrated circuits; Circuit testing; Clocks; Degradation; Frequency; Germanium silicon alloys; Optical amplifiers; Reflective binary codes; Sampling methods; Silicon germanium;
Conference_Titel :
Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0079-1
DOI :
10.1109/ISSCC.2006.1696297
