• DocumentCode
    2571114
  • Title

    A 22GS/s 5b adc in 0.13/spl mu/m SiGe BiCMOS

  • Author

    Schvan, Peter ; Pollex, Daniel ; Wang, Shing-Chi ; Falt, Chris ; Ben-Hamida, Naim

  • Author_Institution
    Nortel, Ottawa, Ont.
  • fYear
    2006
  • fDate
    6-9 Feb. 2006
  • Firstpage
    2340
  • Lastpage
    2349
  • Abstract
    A 22GS/S 5b ADC implemented in 130nm SiGe BiCMOS technology is presented. The ADC has 0.64V input range and achieves 4.4b and 3.5b ENOB with 34dB and 29dB SFDR at 5GHz and 7GHz input frequencies, respectively. Measured DNL and INL are <0.5LSB and BER is 10-4 at 22GS/s. The ADC consumes 3W from a 3.3V supply
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; analogue-digital conversion; error statistics; 0.13 micron; 0.64 V; 130 nm; 3.3 V; 3.5 bit; 4.4 bit; 5 GHz; 5 bit; 7 GHz; BiCMOS technology; SiGe; analog-to-digital converter; bit error rate; BiCMOS integrated circuits; Circuit testing; Clocks; Degradation; Frequency; Germanium silicon alloys; Optical amplifiers; Reflective binary codes; Sampling methods; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    1-4244-0079-1
  • Type

    conf

  • DOI
    10.1109/ISSCC.2006.1696297
  • Filename
    1696297
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2571114