2.5 W CW X-band heterojunction bipolar transistor

Author

Bayraktaroglu, B. ; Hudgens, R.D. ; Khatibzadeh, M.A. ; Tserng, H.Q.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1989

fDate

13-15 June 1989

Firstpage

1057

Abstract

A 2.43-W CW (continuous wave) output power was obtained with AlGaAs-GaAs heterojunction bipolar transistors at 10 GHz with 5.8-dB gain and 30% power-added efficiency using 2- mu m minimum-geometry devices. The device design and fabrication techniques were improved to maintain high power density (>3 W/mm of emitter length) operation as the device size is increased. Accurate device models were developed both for common-emitter and common-base devices to aid in this size scaling.<>

Keywords

III-V semiconductors; aluminium compounds; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; power transistors; semiconductor device models; solid-state microwave devices; 10 GHz; 2 micron; 2.43 to 2.5 W; 30 percent; 5.8 dB; AlGaAs-GaAs; CW output power; HBT; SHF; X-band; common-base devices; common-emitter; device design; device models; fabrication techniques; heterojunction bipolar transistor; high power density; microwave power device; power-added efficiency; size scaling; small signal equivalent circuit; Bipolar transistors; FETs; Fabrication; Fingers; Gallium arsenide; Geometry; Heterojunction bipolar transistors; Power generation; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1989., IEEE MTT-S International

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MWSYM.1989.38904

Filename

38904