InP-to-Si wafer heterobonding for optical MEMs

Author

Pasquariello, Donato ; Camacho, Martin ; Hjort, Klas

Author_Institution

Angstrom Lab., Uppsala Univ., Sweden

fYear

2000

fDate

2000

Firstpage

57

Lastpage

58

Abstract

Summary form only given. We evaluate hydrophilic and hydrophobic surface pre-treatments in InP-to-Si direct wafer bonding. Surface roughness and surface chemistry was examined using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). After bonding, the bonded interfaces were evaluated using infrared transmission imaging, bond-strength and current-voltage (I-V) measurements

Keywords

III-V semiconductors; X-ray photoelectron spectra; atomic force microscopy; indium compounds; integrated circuit technology; integrated circuit testing; micro-optics; micromechanical devices; wafer bonding; AFM; I-V measurements; IR transmission imaging; InP; InP-to-Si direct wafer bonding; InP-to-Si wafer heterobonding; Si; X-ray photoelectron spectroscopy; XPS; atomic force microscopy; bond-strength; bonded interfaces; current-voltage measurements; hydrophilic surface pre-treatments; hydrophobic surface pre-treatments; infrared transmission imaging; optical MEMs; surface chemistry; surface roughness; Atom optics; Atomic force microscopy; Atomic measurements; Chemistry; Photoelectron microscopy; Rough surfaces; Spectroscopy; Surface roughness; Wafer bonding; X-ray imaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical MEMS, 2000 IEEE/LEOS International Conference on

Conference_Location

Kauai, HI

Print_ISBN

0-7803-6257-8

Type

conf

DOI

10.1109/OMEMS.2000.879625

Filename

879625