Preparation of CIGS solar cell components by improved e-beam ablation technology and control of their final parameters

Author

Andriesh, A.M. ; Verlan, V.I. ; Malahova, L.A.

Volume

1

fYear

2002

fDate

2002

Firstpage

199

Abstract

Two step technology for deposition of CuIn_1-xGa_xSe₂ (CIGS) polycrystalline films was developed: deposition with the help of an "e-beam ablation" process at 250°C and subsequent selenization at 500°C. X-ray diffraction analysis of films showed chalcopyrite structure with stringent <112> orientation. The thin films have optical absorption coefficients in the 10⁴ cm^-1 range and the band gaps are 1.0, 1.4 and 1.65 eV for x=0, 0.25, and 1.0 respectively. The method of admittance spectroscopy for determination of density of concentration of deep states (N(E)) was applied for optimization of the deposition process and the photovoltaic properties. The continuous distribution N(E) has been found.

Keywords

X-ray diffraction; absorption coefficients; copper compounds; crystal orientation; deep levels; electron beam deposition; electronic density of states; energy gap; gallium compounds; indium compounds; photovoltaic effects; semiconductor growth; semiconductor thin films; solar cells; ternary semiconductors; 1.0 eV; 1.4 eV; 1.65 eV; 250 C; 500 C; CIGS solar cell components; CuIn_1-xGa_xSe₂ polycrystalline films; CuInGaSe₂; X-ray diffraction analysis; admittance spectroscopy; band gaps; chalcopyrite structure; continuous distribution; deep states density; deposition process optimization; e-beam ablation technology; final parameter control; optical absorption coefficients; photovoltaic properties optimization; selenization; stringent <112> orientation; two step deposition technology; Admittance; Electromagnetic wave absorption; Optical diffraction; Optical films; Optimization methods; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Spectroscopy; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2002. CAS 2002 Proceedings. International

Print_ISBN

0-7803-7440-1

Type

conf

DOI

10.1109/SMICND.2002.1105830

Filename

1105830