DocumentCode
2571625
Title
Design of W-band SPDT switch by employing full-wave EM simulator
Author
Jia, Shuhan ; Xue, Wei
Author_Institution
EHF Key Lab. of Fundamental Sci., UESTC, Chengdu, China
fYear
2012
fDate
19-21 Oct. 2012
Firstpage
425
Lastpage
427
Abstract
This paper presents the design and performance of a W-band single pole double throw (SPDT) switch. The beam lead PIN diodes are modeled using a full-wave electromagnetic (EM) simulator and connected in parallel with unilateral finline, by this approach, a 3 mm SPDT switch is designed. Our simulation results show that the switch has low insertion loss and high isolation in a wide bandwidth.
Keywords
microwave switches; millimetre wave devices; p-i-n diodes; W-band SPDT switch design; W-band single pole double throw switch; beam lead PIN diode; full-wave EM simulator; full-wave electromagnetic simulator; size 3 mm; Finline; Insertion loss; Integrated circuit modeling; PIN photodiodes; Semiconductor diodes; Simulation; Switches; PIN diode; SPDT; W-band; finline;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Problem-Solving (ICCP), 2012 International Conference on
Conference_Location
Leshan
Print_ISBN
978-1-4673-1696-5
Electronic_ISBN
978-1-4673-1695-8
Type
conf
DOI
10.1109/ICCPS.2012.6384273
Filename
6384273
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