Title :
Thyristor-Based Volatile Memory in Nano-Scale CMOS
Author :
Roy, Rich ; Nemati, Farid ; Young, Ken ; Bateman, Bruce ; Chopra, Rajesh ; Jung, Seong-Ook ; Show, Chiming ; Cho, Hyun-Jin
Author_Institution :
T-RAM Semicond., San Jose, CA
Abstract :
A thyristor-based memory cell technology provides SRAM-like performance at 2times to 3times the density of conventional 6T SRAM. The technology is readily embedded into conventional nano-scale CMOS and scales into future SOI and FinFET technologies. A 19mm2 0.13mum 9Mb SOI test chip has a 0.562mum2 cell with a cell-R/W time <2ns
Keywords :
CMOS memory circuits; SRAM chips; nanoelectronics; thyristors; 0.13 micron; 9 MByte; FinFET technologies; SOI test chip; SRAM-like performance; nanoscale CMOS; thyristor-based volatile memory; CMOS technology; Capacitors; FinFETs; Nanoscale devices; Performance gain; Random access memory; Read-write memory; Scalability; Thyristors; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0079-1
DOI :
10.1109/ISSCC.2006.1696327
