• DocumentCode
    2571640
  • Title

    Thyristor-Based Volatile Memory in Nano-Scale CMOS

  • Author

    Roy, Rich ; Nemati, Farid ; Young, Ken ; Bateman, Bruce ; Chopra, Rajesh ; Jung, Seong-Ook ; Show, Chiming ; Cho, Hyun-Jin

  • Author_Institution
    T-RAM Semicond., San Jose, CA
  • fYear
    2006
  • fDate
    6-9 Feb. 2006
  • Firstpage
    2612
  • Lastpage
    2621
  • Abstract
    A thyristor-based memory cell technology provides SRAM-like performance at 2times to 3times the density of conventional 6T SRAM. The technology is readily embedded into conventional nano-scale CMOS and scales into future SOI and FinFET technologies. A 19mm2 0.13mum 9Mb SOI test chip has a 0.562mum2 cell with a cell-R/W time <2ns
  • Keywords
    CMOS memory circuits; SRAM chips; nanoelectronics; thyristors; 0.13 micron; 9 MByte; FinFET technologies; SOI test chip; SRAM-like performance; nanoscale CMOS; thyristor-based volatile memory; CMOS technology; Capacitors; FinFETs; Nanoscale devices; Performance gain; Random access memory; Read-write memory; Scalability; Thyristors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    1-4244-0079-1
  • Type

    conf

  • DOI
    10.1109/ISSCC.2006.1696327
  • Filename
    1696327
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2571640