DocumentCode
2571664
Title
Investigation into sub-threshold performance of double-gate accumulation-mode SOI PMOSFET
Author
Zhengfan, Zhang ; Zhaoji, Li ; Kaizhou, Tan ; Jiabin, Zhang
Author_Institution
Univ. of Electron. Sci. & Technol. of China, Chengdu
fYear
2007
fDate
22-25 Oct. 2007
Firstpage
1150
Lastpage
1153
Abstract
In this paper, an analytical model of sub-threshold swing for the double-gate accumulation-mode P-channel SOI MOSFET is described. The model is based on Possion´s equation and depletion approximation, and the relation of the sub-threshold swing with both the gate oxide capacitance and the interface trap density is obtained. The model is verified by experiment and by numerical simulation. Also an approach to extracting the interface trap density with sub-threshold swing is proposed.
Keywords
MOSFET; Poisson equation; capacitance; semiconductor device models; silicon-on-insulator; Possion equation; SOI P-channel MOSFET; depletion approximation; double-gate accumulation-mode; gate oxide capacitance; sub-threshold swing; Analytical models; Equations; Integrated circuit technology; Isolation technology; MOSFET circuits; Numerical simulation; Parasitic capacitance; Performance analysis; Radiation hardening; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC, 2007. ASICON '07. 7th International Conference on
Conference_Location
Guilin
Print_ISBN
978-1-4244-1132-0
Electronic_ISBN
978-1-4244-1132-0
Type
conf
DOI
10.1109/ICASIC.2007.4415837
Filename
4415837
Link To Document