Title :
Influence of the cabling geometry on paralleled diodes in a high power rectifier
Author :
Clavel, E. ; Roudet, J. ; Schanen, J.-L. ; Foutanet, A.
Author_Institution :
CNRS, Univ. Joseph Fourier, Grenoble, France
Abstract :
In this paper, the relationship between wiring geometry and current unbalances of paralleled diodes in a high-current rectifier is studied. An electrical modelling of one arm of the rectifier is carried out, using lumped inductances computed from geometrical data. After electrical simulation, current unbalances in paralleled semiconductors are observed. An action on the incriminated bar geometry allows a reduction of these unbalances
Keywords :
AC-DC power convertors; circuit analysis computing; power cables; power engineering computing; power semiconductor diodes; power semiconductor switches; rectifying circuits; semiconductor device models; software packages; switching circuits; InCa software; cabling geometry; circuit simulation; current unbalance; electrical modelling; geometrical data; high-current rectifier; lumped inductances; paralleled semiconductor diodes; Aluminum; Computational modeling; Computer simulation; Electrothermal effects; Finite element methods; Geometry; Lead compounds; Rectifiers; Semiconductor diodes; Wiring;
Conference_Titel :
Industry Applications Conference, 1996. Thirty-First IAS Annual Meeting, IAS '96., Conference Record of the 1996 IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-3544-9
DOI :
10.1109/IAS.1996.560203
