DocumentCode :
2571748
Title :
International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)
fYear :
1998
fDate :
6-9 Dec. 1998
Abstract :
Conference proceedings front matter may contain various advertisements, welcome messages, committee or program information, and other miscellaneous conference information. This may in some cases also include the cover art, table of contents, copyright statements, title-page or half title-pages, blank pages, venue maps or other general information relating to the conference that was part of the original conference proceedings.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; DRAM chips; UHF transistors; display instrumentation; ferroelectric storage; flash memories; high electron mobility transistors; image sensors; integrated circuit interconnections; integrated circuit reliability; isolation technology; low-power electronics; micromechanical devices; microwave transistors; power semiconductor devices; quantum optics; silicon-on-insulator; single electron transistors; thin film transistors; BiCMOS; CMOS devices; DRAMs; FRAMs; HEMTs; MEMS; MOS physics; RF devices; SOI; TFTs; display technologies; flash memories; gate dielectrics; gate oxide reliability; high power devices; image sensors; interconnect modelling; isolation technology; low-voltage electronics; process modelling; quantum electronics; single electron devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-4774-9
Type :
conf
DOI :
10.1109/IEDM.1998.746232
Filename :
746232
Link To Document :
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