Exacts solutions of the Poisson´s equations in pseudo-MOS/SOI transistors

Author

Ravariu, C. ; Ravariu, F. ; Rusu, A. ; Dobrescu, D. ; Dobrescu, L. ; Chiran, I.

Author_Institution

Fac. of Electron. & Telecommun., Bucharest Univ., Romania

Volume

2

fYear

2002

fDate

2002

Firstpage

249

Abstract

The pseudo-MOS/SOI transistor can be a test device or an inherent part of an SOI device controlled by the back gate. Previous models relied on the depletion approximation to compute the potential and electric field distributions. The advantage is computational simplicity; but it can only be applied just for the depletion regime. The exact solutions of the Poisson equations describe the electric field and potential in the pseudo-MOS transistors for all working regimes. The analytical models are compared with ATLAS simulations.

Keywords

MOSFET; Poisson equation; electric fields; electric potential; semiconductor device models; silicon-on-insulator; Poisson equation exact solutions; Si-SiO₂; back gate controlled SOI devices; depletion approximation; depletion regime operation; electric field distributions; potential distributions; pseudo-MOS/SOI transistors; test device transistors; Analytical models; Dielectric substrates; Dielectrics and electrical insulation; Distributed computing; Doping; Electric potential; Optical films; Poisson equations; Semiconductor films; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2002. CAS 2002 Proceedings. International

Print_ISBN

0-7803-7440-1

Type

conf

DOI

10.1109/SMICND.2002.1105842

Filename

1105842