Quasi-optical watt-level millimeter-wave monolithic solid-state diode-grid frequency multipliers

Author

Hwu, R.J. ; Sadwick, L.P. ; Luhmann, N.C., Jr. ; Rutledge, D.B. ; Sokolich, M. ; Hancock, B.

Author_Institution

California Univ., Los Angeles, CA, USA

fYear

1989

fDate

13-15 June 1989

Firstpage

1069

Abstract

A monolithic planar array containing thousands of GaAs barrier-intrinsic-n/sup +/ diodes have produced 1-W output power at 100 GHz in a tripler configuration. Tripling efficiency of 8.5% has been obtained from approximately 4-mW incident power on each diode, in excellent agreement with the predictions of large-signal nonlinear circuit analysis of frequency multiplication. The device performance is limited by the parameters of the fabricated diodes. Significant improvement is expected with realizable diode parameters and optimized pumping condition.<>

Keywords

III-V semiconductors; MMIC; frequency multipliers; gallium arsenide; nonlinear network analysis; semiconductor diodes; 1 W; 100 GHz; 8.5 percent; BIN diode; EHF; GaAs; III-V semiconductors; MM-wave circuits; barrier-intrinsic-n/sup +/ diodes; device performance; diode parameters; diode-grid frequency multipliers; large-signal nonlinear circuit analysis; millimeter-wave; monolithic planar array; optimized pumping condition; tripler configuration; watt-level; Capacitance-voltage characteristics; Fabrication; Frequency conversion; Gallium arsenide; Millimeter wave technology; Oscillators; Power generation; Schottky diodes; Solid state circuits; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1989., IEEE MTT-S International

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MWSYM.1989.38907

Filename

38907