Title :
Study of a positive bevel angle edge termination for high voltage power structures
Author :
Hidalgo, S. ; Flores, D. ; Obieta, I. ; Mazarredo, I. ; Millán, J.
Author_Institution :
Centro Nacional de Microelectron., Bellaterra, Spain
Abstract :
This paper provides an extensive analysis of power diodes with a MESA structure edge termination as a function of the main geometrical and technological parameters. The effect of the fixed charge density inherent in the MESA groove filling material is also considered. 2D simulations have been carried out to show the dependence on each parameter and to determine the location of the breakdown point. Fagor commercial MESA power diodes have been used to corroborate the optimisation of the voltage capability.
Keywords :
optimisation; power semiconductor diodes; semiconductor device breakdown; semiconductor device models; semiconductor device packaging; semiconductor device reliability; 1000 V; MESA groove filling material fixed charge density; MESA structure power diodes; breakdown point location; high voltage power structures; positive bevel angle edge termination; voltage capability optimisation; Cathodes; Diodes; Doping; Electric breakdown; Glass; Leakage current; Packaging; Passivation; Resins; Voltage;
Conference_Titel :
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN :
0-7803-7440-1
DOI :
10.1109/SMICND.2002.1105845
