Title :
RF vertical MOSFET utilizing power trench® technology for 50V operation
Author_Institution :
Discrete Power Technol. Group, Fairchild Semicond., San Jose, CA, USA
Abstract :
The vertical DMOS RF amplifier employs power trench technology to achieve 50 V operation. This paper discusses results from a study of a high breakdown voltage RF device, which can achieve a power per active area of 280 W/mm2, at an operating voltage of 50 V and a power density of 100 W/mm2 at an operating voltage of 28 V.
Keywords :
UHF field effect transistors; isolation technology; power MOSFET; semiconductor device breakdown; semiconductor device measurement; 2110 MHz; 28 V; 50 V; 900 MHz; RF vertical MOSFET; VDMOS power density; breakdown voltage; device operating voltage; high breakdown voltage RF devices; power per active area; power trench technology; vertical DMOS RF amplifiers; Base stations; Breakdown voltage; Costs; Electrodes; MOSFET circuits; Power MOSFET; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Wire;
Conference_Titel :
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN :
0-7803-7440-1
DOI :
10.1109/SMICND.2002.1105846
