Investigations during annealing of the interface in Si-Si bonded wafers by multiple internal transmission infrared spectroscopy

Author

Himcinschi, C. ; Friedrich, M. ; Hiller, K. ; Gessner, T. ; Zahn, D.R.T.

Author_Institution

Inst. fur Phys., Tech. Univ. Chemnitz, Germany

Volume

2

fYear

2002

fDate

2002

Firstpage

271

Abstract

A multiple internal transmission (MIT) technique was used for infrared (IR) spectroscopic investigations during annealing of the interfaces in room temperature Si-Si bonded wafers with different chemical pre-treatments. The evolution with annealing temperature of the chemical species at the interface are used to explain the bonding mechanism of Si wafers in the temperature range of 30-400°C.

Keywords

annealing; elemental semiconductors; infrared spectroscopy; interface structure; silicon; surface treatment; wafer bonding; 30 to 400 degC; IR spectra; MIT infrared spectroscopic investigations; Si; Si wafer bonding mechanism; Si-Si bonded wafer interface annealing; annealing temperature range; bonding strength; chemical species evolution; multiple internal transmission IR spectroscopy; room temperature Si-Si bonded wafers; wafer chemical pre-treatments; Annealing; Chemicals; Infrared spectra; Plasma applications; Plasma chemistry; Plasma measurements; Plasma temperature; Spectroscopy; Temperature distribution; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2002. CAS 2002 Proceedings. International

Print_ISBN

0-7803-7440-1

Type

conf

DOI

10.1109/SMICND.2002.1105847

Filename

1105847