Dynamic range improvement by narrow-channel effect suppression and smear reduction technologies in small pixel IT-CCD image sensors

Author

Tanabe, A. ; Kudoh, Y. ; Kawakami, Y. ; Masubuchi, K. ; Kawai, S. ; Yamada, T. ; Morimoto, M. ; Arai, K. ; Hatano, K. ; Furumiya, M. ; Nakashiba, Y. ; Mutoh, N. ; Orihara, K. ; Teranishi, H.

Author_Institution

Silicon Syst. Res. Labs., NEC Corp., Sagamihara, Japan

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

41

Lastpage

44

Abstract

Technologies for narrow-channel effect suppression in photodiodes (PDs) and vertical CCDs (V-CCDs) and for smear reduction in PDs have been developed in order to improve dynamic range in small pixel interline-transfer CCD (IT-CCD) image sensors. The new technologies have been applied to a progressive-scan IT-CCD image sensor with 5 /spl mu/m square pixels and have (1) increased the charge handling capability of its V-CCDs to 4500 electrons/V; (2) improved its smear value to -95 dB; and (3) increased the saturation charge of its PDs to 2.3/spl times/10/sup 4/ electrons.

Keywords

CCD image sensors; photodiodes; dynamic range; interline-transfer CCD; narrow channel effect; photodiode; progressive scan IT-CCD image sensor; saturation charge; smear; vertical CCD; Charge coupled devices; Dynamic range; Electrons; Image sensors; Knee; National electric code; Photodiodes; Pixel; Silicon; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746242

Filename

746242