Title :
Spectroscopic ellipsometry characterisation of solid phase crystallisation of silicon thin films obtained by LPCVD
Author :
Modreanu, M. ; Gartner, Mariuca ; Cobianu, C. ; Manea, E.
Author_Institution :
Nat. Microelectron. Res. Centre, Cork, Ireland
Abstract :
This work investigated the low and high temperature solid phase crystallisation (SPC) on silicon thin films prepared by low-pressure chemical vapour deposition. Silicon thin films were deposited by low-pressure chemical vapor deposition (LPCVD) on oxidized silicon substrates, from silane decomposition. The deposition temperatures use in our experiment have been 500, 530, 550, 590 and 615°C and the pressure values were 20, 53 and 100 Pa. Spectroscopic ellipsometry (SE) was used in order to point out the phase transition of as-deposited and annealed LPCVD silicon from amorphous to crystalline state via a mixed phase. The dependence of the structural parameters on the deposition parameters has been investigated. A better characterization of the polysilicon layer is achieved by using the following optical model: c-Si/SiO2+voids/c-Si+a-Si+voids/SiO2+c-Si+a-Si+voids. This optical model for LPCVD silicon films gives the possibility of extracting information about optical, surface roughness and microstructural properties. The SE results were in good agreement with the X-ray diffraction (XRD) measurements. SE has proved an improved sensitivity to microstructural changes in the as-deposited and annealed LPCVD silicon compared with other structural characterization methods like XRD.
Keywords :
X-ray diffraction; chemical vapour deposition; crystal microstructure; crystallisation; elemental semiconductors; ellipsometry; recrystallisation annealing; semiconductor thin films; silicon; surface topography; voids (solid); 100 Pa; 20 Pa; 500 degC; 53 Pa; 530 degC; 550 degC; 590 degC; 615 degC; SE; SPC; Si-SiO2; X-ray diffraction; XRD; amorphous silicon; as-deposited/annealed silicon; c-Si/SiO2; crystalline silicon; deposition pressure; deposition temperatures; low-pressure chemical vapour deposition; low/high temperature solid phase crystallisation; microstructural properties; mixed phase structure; optical models; oxidized silicon substrates; polycrystalline silicon; polysilicon LPCVD thin films; silane decomposition; spectroscopic ellipsometry; surface roughness; voids; Crystallization; Ellipsometry; Optical films; Optical sensors; Semiconductor thin films; Silicon; Solids; Spectroscopy; Sputtering; Temperature;
Conference_Titel :
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN :
0-7803-7440-1
DOI :
10.1109/SMICND.2002.1105851