Direct measurement of gate depletion in high breakdown (405 V) AlGaN/GaN heterostructure field effect transistors

Author

Vetury, R. ; Wu, Y.-F. ; Fini, P.T. ; Parish, G. ; Keller, S. ; DenBaars, S. ; Mishra, U.K.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

55

Lastpage

58

Abstract

A new measurement technique that directly reveals the extent of the gate depletion region in FETs by using floating Schottky gates as potential probes is presented. Measurements on GaN heterojunction field heterojunction field effect transistors (HFETs) show that large extension of the depletion width is responsible for the high dc breakdown voltages in these HFETs.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; junction gate field effect transistors; power field effect transistors; semiconductor device breakdown; semiconductor device measurement; 405 V; AlGaN-GaN; AlGaN/GaN heterostructure field effect transistor; DC breakdown voltage; floating Schottky gate; gate depletion; measurement technique; potential probe; Aluminum gallium nitride; Electric breakdown; FETs; Gallium nitride; HEMTs; Heterojunctions; MODFETs; Measurement techniques; Monitoring; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746245

Filename

746245