Title :
Direct measurement of gate depletion in high breakdown (405 V) AlGaN/GaN heterostructure field effect transistors
Author :
Vetury, R. ; Wu, Y.-F. ; Fini, P.T. ; Parish, G. ; Keller, S. ; DenBaars, S. ; Mishra, U.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
A new measurement technique that directly reveals the extent of the gate depletion region in FETs by using floating Schottky gates as potential probes is presented. Measurements on GaN heterojunction field heterojunction field effect transistors (HFETs) show that large extension of the depletion width is responsible for the high dc breakdown voltages in these HFETs.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; junction gate field effect transistors; power field effect transistors; semiconductor device breakdown; semiconductor device measurement; 405 V; AlGaN-GaN; AlGaN/GaN heterostructure field effect transistor; DC breakdown voltage; floating Schottky gate; gate depletion; measurement technique; potential probe; Aluminum gallium nitride; Electric breakdown; FETs; Gallium nitride; HEMTs; Heterojunctions; MODFETs; Measurement techniques; Monitoring; Voltage;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746245
