Low-distortion GaAs-based field effect transistors with InGaP channel layer for high-voltage operation

We developed high-breakdown-voltage and low-distortion InGaP channel field effect transistors (FETs) with optimized AlGaAs buffer and barrier layers that can be fabricated by using conventional GaAs FET fabrication processes. The InGaP channel FETs have an extremely high on-state drain-to-source breakdown voltage (@Vgs=0 V) of over 40 V, and a gate-to-drain breakdown voltage of 55 V. This enables high-voltage operation at 40 V. The third-order intermodulation distortion of the InGaP channel FETs was 10-20 dB lower than that of the GaAs channel FETs.