DocumentCode
2572028
Title
Depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresis
Author
Wang, Y.C. ; Hong, M. ; Kuo, J.M. ; Mannaerts, J.P. ; Kwo, J. ; Tsai, H.S. ; Krajewski, J.J. ; Chen, Y.K. ; Cho, A.Y.
Author_Institution
Bell Lab., Lucent Technol., Murray Hill, NJ, USA
fYear
1998
fDate
6-9 Dec. 1998
Firstpage
67
Lastpage
70
Abstract
For the first time, depletion-mode GaAs MOSFETs with undetectable hysteresis and negligible drain current drift I-V characteristics were successfully fabricated using MBE grown Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as the gate oxide. The absence of drain current drift and hysteresis is a significant advance towards the manufacture of commercially useful GaAs MOSFETs.
Keywords
III-V semiconductors; MOSFET; gallium arsenide; GaAs-Ga/sub 2/O/sub 3/:Gd/sub 2/O/sub 3/; I-V characteristics; MBE Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate oxide; depletion-mode GaAs MOSFET; drain current drift; hysteresis; FET integrated circuits; Gallium arsenide; Hysteresis; MMICs; MOSFETs; Microwave FET integrated circuits; Microwave integrated circuits; Molecular beam epitaxial growth; Substrates; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-4774-9
Type
conf
DOI
10.1109/IEDM.1998.746248
Filename
746248
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