Distortion in microwave and RF switches by reverse biased PIN diodes

Author

Caverly, R.H. ; Hiller, G.

Author_Institution

Dept. of Electr. & Comput. Eng., Southeastern Massachusetts Univ., North Dartmouth, MA, USA

fYear

1989

fDate

13-15 June 1989

Firstpage

1073

Abstract

An analytical and experimental study of distortion generated by reverse-biased PIN diodes is presented. The fundamental analytical conclusion is that the magnitude of the reverse bias distortion is inversely proportional to the slope of the C-V characteristic (for second-order distortion) and frequency. This is in contrast to the forward-bias PIN diode switch distortion case where the distortion improves with increasing frequency. The analysis shows that thick PIN diodes tend to exhibit less distortion than thin diodes. Experimental distortion data taken at 1000 MHz on diodes of different thicknesses confirm this result.<>

Keywords

electric distortion; p-i-n diodes; semiconductor switches; solid-state microwave devices; 1000 MHz; C-V characteristic; RF switches; microwave switches; p-i-n diodes; reverse bias distortion; reverse biased PIN diodes; second-order distortion; thick diodes; thin diodes; Capacitance; Capacitance-voltage characteristics; Communication switching; Harmonic distortion; Radio frequency; Semiconductor diodes; Switches; Switching circuits; Tail; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1989., IEEE MTT-S International

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MWSYM.1989.38908

Filename

38908