• DocumentCode
    2572035
  • Title

    Blistering and exfoliation of hydrogen and helium implanted (100) GaAs

  • Author

    Radu, I. ; Szafraniak, I. ; Scholz, R. ; Alexe, M. ; Gosele, U.

  • Author_Institution
    Max Planck Inst. of Microstructure Phys., Halle, Germany
  • Volume
    2
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    305
  • Abstract
    Blistering and exfoliation of hydrogen and helium implanted GaAs was studied. The influence of the dose and implantation temperature on the formation of microcracks during implantation and their evolution at subsequent annealings were investigated. Layer splitting instead of blistering of helium implanted GaAs was demonstrated.
  • Keywords
    III-V semiconductors; annealing; gallium arsenide; helium; hydrogen; ion implantation; microcracks; GaAs:H; GaAs:H,He; GaAs:He; H implanted wafers; He implanted wafers; He+/H2+ co-implantation; [100] oriented GaAs; annealings; blistering; exfoliation; implantation dose; implantation temperature; layer splitting; microcracks; semi-insulating GaAs wafers; wafer temperature; Annealing; Atomic force microscopy; Gallium arsenide; Helium; Hydrogen; Scanning electron microscopy; Silicon; Temperature; Transmission electron microscopy; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2002. CAS 2002 Proceedings. International
  • Print_ISBN
    0-7803-7440-1
  • Type

    conf

  • DOI
    10.1109/SMICND.2002.1105855
  • Filename
    1105855
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2572035