Title :
Blistering and exfoliation of hydrogen and helium implanted (100) GaAs
Author :
Radu, I. ; Szafraniak, I. ; Scholz, R. ; Alexe, M. ; Gosele, U.
Author_Institution :
Max Planck Inst. of Microstructure Phys., Halle, Germany
Abstract :
Blistering and exfoliation of hydrogen and helium implanted GaAs was studied. The influence of the dose and implantation temperature on the formation of microcracks during implantation and their evolution at subsequent annealings were investigated. Layer splitting instead of blistering of helium implanted GaAs was demonstrated.
Keywords :
III-V semiconductors; annealing; gallium arsenide; helium; hydrogen; ion implantation; microcracks; GaAs:H; GaAs:H,He; GaAs:He; H implanted wafers; He implanted wafers; He+/H2+ co-implantation; [100] oriented GaAs; annealings; blistering; exfoliation; implantation dose; implantation temperature; layer splitting; microcracks; semi-insulating GaAs wafers; wafer temperature; Annealing; Atomic force microscopy; Gallium arsenide; Helium; Hydrogen; Scanning electron microscopy; Silicon; Temperature; Transmission electron microscopy; Wafer bonding;
Conference_Titel :
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN :
0-7803-7440-1
DOI :
10.1109/SMICND.2002.1105855
