Title :
Improvement of off-state breakdown voltage in power GaAs MESFETs based on an accurate simulation scheme
Author :
Kunihiro, K. ; Takahashi, Y. ; Ohno, Y.
Author_Institution :
Optoelectron. & High Frequency Device Res. Lab., NEC Corp., Tsukuba, Japan
Abstract :
A realistic simulation scheme for improving off-state breakdown voltage (BV/sub gd/) in power GaAs MESFETs has been developed. In this scheme, impact ionization, tunneling, and surface charge dynamics are all considered. The simulation successfully describes experimentally observed breakdown behavior. Using the simulation results, we have developed an FET with a neutralized p-buffer layer that improves BV/sub gd/ by at least 10 V higher than that of conventional FETs.
Keywords :
III-V semiconductors; gallium arsenide; impact ionisation; power MESFET; semiconductor device breakdown; semiconductor device models; tunnelling; GaAs; impact ionization; neutralized p-buffer layer FET; offstate breakdown voltage; power GaAs MESFETs; simulation scheme; surface charge dynamics; tunneling; Breakdown voltage; Conductivity; Electric breakdown; FETs; Frequency; Gallium arsenide; Impact ionization; MESFETs; National electric code; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746249
