Improvement of off-state breakdown voltage in power GaAs MESFETs based on an accurate simulation scheme

Author

Kunihiro, K. ; Takahashi, Y. ; Ohno, Y.

Author_Institution

Optoelectron. & High Frequency Device Res. Lab., NEC Corp., Tsukuba, Japan

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

71

Lastpage

74

Abstract

A realistic simulation scheme for improving off-state breakdown voltage (BV/sub gd/) in power GaAs MESFETs has been developed. In this scheme, impact ionization, tunneling, and surface charge dynamics are all considered. The simulation successfully describes experimentally observed breakdown behavior. Using the simulation results, we have developed an FET with a neutralized p-buffer layer that improves BV/sub gd/ by at least 10 V higher than that of conventional FETs.

Keywords

III-V semiconductors; gallium arsenide; impact ionisation; power MESFET; semiconductor device breakdown; semiconductor device models; tunnelling; GaAs; impact ionization; neutralized p-buffer layer FET; offstate breakdown voltage; power GaAs MESFETs; simulation scheme; surface charge dynamics; tunneling; Breakdown voltage; Conductivity; Electric breakdown; FETs; Frequency; Gallium arsenide; Impact ionization; MESFETs; National electric code; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746249

Filename

746249