• DocumentCode
    2572059
  • Title

    Fowler-Nordheim tunneling in epitaxial yttrium oxide on silicon for high-k gate applications

  • Author

    Mereu, B. ; Vellianitis, G. ; Apostolopoulos, G. ; Dimouls, A. ; Alexe, M.

  • Author_Institution
    Max-Planck Inst. fur Mikrostrukturphysik, Halle, Germany
  • Volume
    2
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    309
  • Abstract
    Fowler-Nordheim tunneling occurs in epitaxially grown Y2O3 on Si [100]. The barrier height evaluated from F-N plots was found to be about 1 eV and 1.4 eV for negative and positive gate bias, respectively. Further in-situ annealing decreases the barrier height for negative gate bias to about 0.38 eV.
  • Keywords
    annealing; dielectric thin films; elemental semiconductors; epitaxial layers; molecular beam epitaxial growth; semiconductor-insulator boundaries; silicon; tunnelling; yttrium compounds; 1 eV; 1.4 eV; Fowler-Nordheim tunneling; MBE; Si [100]; Y2O3 gate oxide; Y2O3-Si; barrier height; epitaxially grown Y2O3; high-k gate applications; in-situ annealing; negative gate bias; positive gate bias; Annealing; Electrons; High K dielectric materials; High-K gate dielectrics; Leakage current; Molecular beam epitaxial growth; Silicon; Temperature; Tunneling; Yttrium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2002. CAS 2002 Proceedings. International
  • Print_ISBN
    0-7803-7440-1
  • Type

    conf

  • DOI
    10.1109/SMICND.2002.1105856
  • Filename
    1105856
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2572059