Title :
Fowler-Nordheim tunneling in epitaxial yttrium oxide on silicon for high-k gate applications
Author :
Mereu, B. ; Vellianitis, G. ; Apostolopoulos, G. ; Dimouls, A. ; Alexe, M.
Author_Institution :
Max-Planck Inst. fur Mikrostrukturphysik, Halle, Germany
Abstract :
Fowler-Nordheim tunneling occurs in epitaxially grown Y2O3 on Si [100]. The barrier height evaluated from F-N plots was found to be about 1 eV and 1.4 eV for negative and positive gate bias, respectively. Further in-situ annealing decreases the barrier height for negative gate bias to about 0.38 eV.
Keywords :
annealing; dielectric thin films; elemental semiconductors; epitaxial layers; molecular beam epitaxial growth; semiconductor-insulator boundaries; silicon; tunnelling; yttrium compounds; 1 eV; 1.4 eV; Fowler-Nordheim tunneling; MBE; Si [100]; Y2O3 gate oxide; Y2O3-Si; barrier height; epitaxially grown Y2O3; high-k gate applications; in-situ annealing; negative gate bias; positive gate bias; Annealing; Electrons; High K dielectric materials; High-K gate dielectrics; Leakage current; Molecular beam epitaxial growth; Silicon; Temperature; Tunneling; Yttrium;
Conference_Titel :
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN :
0-7803-7440-1
DOI :
10.1109/SMICND.2002.1105856
