Analysis of self-heating effect and breakdown characteristics in partial SOI LDMOS with multi silicon windows

This paper proposes a novel partial SOI LDMOS with multi silicon windows. The two-dimensional numerical analysis is performed to investigate the self-heating effects and breakdown characteristics of partial SOI LDMOS. The PSOI devices with multi silicon windows overcome the disadvantages of the conventional PSOI devices and are shown to keep better balance between the self-heating effects and the breakdown voltage which can be optimized at the same time. Furthermore, the drive current and threshold voltage shift are improved during high-temperature operation effectively. The optimum design of structure for the provided design is also presented according to the synthetical simulations of its performances.